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1. general description the TZA3046 is a transimpedance ampli?er with automatic gain control (agc), designed to be used in fiber channel/gigabit ethernet (fc/ge) ?ber optic links. it ampli?es the current generated by a photo detector (pin diode or avalanche photodiode) and converts it to a differential output voltage. it offers a current mirror of average photo current for rssi monitoring to be used in sff-8472 compliant modules. the low noise characteristics makes it suitable for fc/ge applications, but also for fttx applications. 2. features n low equivalent input noise current, typically 126 na (rms) n wide dynamic range, typically 2.5 m a to 1.7 ma (p-p) n differential transimpedance of 7.5 k w (typical) n bandwidth from dc to 1050 mhz (typical) n differential outputs n on-chip agc with possibility of external control n single supply voltage 3.3 v, range 2.97 v to 3.6 v n bias voltage for pin diode n on-chip current mirror of average photo current for rssi monitoring n identical ports available on both sides of die for easy bond layout and rf polarity selection 3. applications n digital ?ber optic receiver modules in telecommunications transmission systems, in high-speed data networks or in fttx systems. TZA3046 fiber channel/gigabit ethernet transimpedance ampli?er rev. 01 19 may 2006 product data sheet caution this device is sensitive to electrostatic discharge (esd). therefore care should be taken during transport and handling. 4 .com u datasheet
TZA3046_1 ? koninklijke philips electronics n.v. 2006. all rights reserved. product data sheet rev. 01 19 may 2006 2 of 15 philips semiconductors TZA3046 fiber channel/gigabit ethernet transimpedance ampli?er 4. ordering information 5. block diagram table 1: ordering information type number package name description version TZA3046u - bare die, dimensions approximately 0.82 mm 1.3 mm - fig 1. block diagram 290 w outq agc gnd out v cc gain control biasing peak detector TZA3046 d photo c dref c vcc low noise amplifier single-ended to differential converter output buffers 7 or 13 8 or 14 idref_mon 5 or 16 dref i dref 0.2 i dref i idref_mon i pin r dref 1 or 3 9, 10, 11, 12 6 or 15 4 or 17 iphoto 2 r idref_mon 001aae511 4 .com u datasheet
TZA3046_1 ? koninklijke philips electronics n.v. 2006. all rights reserved. product data sheet rev. 01 19 may 2006 3 of 15 philips semiconductors TZA3046 fiber channel/gigabit ethernet transimpedance ampli?er 6. pinning information 6.1 pinning 6.2 pin description fig 2. pin con?guration 001aae512 v cc idref_mon agc outq out gnd gnd v cc idref_mon agc dref iphoto dref out outq gnd gnd 3 1 17 4 16 5 15 6 12 9 11 10 2 7 8 14 13 TZA3046 table 2: bonding pad description bonding pad locations with respect to the center of the die (see figure 10 ); x and y are in m m. symbol pad x y type description dref 1 - 493.6 140 output bias voltage output for pin diode; connect cathode of pin diode to pad 1 or pad 3 iphoto 2 - 493.6 0 input current input; anode of pin diode should be connected to this pad dref 3 - 493.6 - 140 output bias voltage output for pin diode; connect cathode of pin diode to pad 1 or pad 3 v cc 4 - 353.6 - 278.6 supply supply voltage; connect supply voltage to pad 4 or pad 17 idref_mon 5 - 213.6 - 278.6 output current output for rssi measurements; connect a resistor to pad 5 or pad 16 and ground agc 6 - 73.6 - 278.6 input agc voltage; use pad 6 or pad 15 outq 7 66.4 - 278.6 output data output; complement of pad out; use pad 7 or pad 13 out 8 206.4 - 278.6 output data output; use pad 8 or pad 14 [1] gnd 9 346.4 - 278.6 ground ground; connect together pads 9, 10, 11 and pad 12 as many as possible gnd 10 486.4 - 278.6 ground ground; connect together pads 9, 10, 11 and pad 12 as many as possible 4 .com u datasheet
TZA3046_1 ? koninklijke philips electronics n.v. 2006. all rights reserved. product data sheet rev. 01 19 may 2006 4 of 15 philips semiconductors TZA3046 fiber channel/gigabit ethernet transimpedance ampli?er [1] these pads go high when current ?ows into pad iphoto. 7. functional description the TZA3046 is a transimpedance ampli?er (tia) intended for use in ?ber optic receivers for signal recovery in fc/ge or fttx applications. it ampli?es the current generated by a photo detector (pin diode or avalanche photodiode) and converts it to a differential output voltage. the most important characteristics of the TZA3046 are high receiver sensitivity, wide dynamic range and large bandwidth. excellent receiver sensitivity is achieved by minimizing transimpedance ampli?er noise. the TZA3046 has a wide dynamic range to handle the signal current generated by the pin diode which can vary from 2.5 m a to 1.7 ma (p-p). this is implemented by an agc loop which reduces the preampli?er feedback resistance so that the ampli?er remains linear over the whole input range. the agc loop hold capacitor is integrated on-chip, so an external capacitor is not required. the bandwidth of TZA3046 is optimized for fc/ge application. it works from dc onward due to the absence of offset control loops. therefore the amount of consecutive identical digits (cid) will not effect the output waveform. a differential ampli?er converts the output of the preampli?er to a differential voltage. 7.1 pin diode connections the performance of an optical receiver is largely determined by the combined effect of the transimpedance ampli?er and the pin diode. in particular, the method used to connect the pin diode to the input (pad iphoto) and the layout around the input pad strongly in?uences the main parameters of a transimpedance ampli?er, such as sensitivity, bandwidth, and psrr. sensitivity is most affected by the value of the total capacitance at the input pad. therefore, to obtain the highest possible sensitivity the total capacitance should be as low as possible. gnd 11 486.4 278.6 ground ground; connect together pads 9, 10, 11 and pad 12 as many as possible gnd 12 346.4 278.6 ground ground; connect together pads 9, 10, 11 and pad 12 as many as possible outq 13 206.4 278.6 output data output; complement of pad out; use pad 7 or pad 13 out 14 66.4 278.6 output data output; use pad 8 or pad 14 [1] agc 15 - 73.6 278.6 input agc voltage; use pad 6 or pad 15 idref_mon 16 - 213.6 278.6 output current output for rssi measurements; connect a resistor to pad 5 or pad 16 and ground v cc 17 - 353.6 278.6 supply supply voltage; connect supply voltage to pad 4 or pad 17 table 2: bonding pad description continued bonding pad locations with respect to the center of the die (see figure 10 ); x and y are in m m. symbol pad x y type description 4 .com u datasheet
TZA3046_1 ? koninklijke philips electronics n.v. 2006. all rights reserved. product data sheet rev. 01 19 may 2006 5 of 15 philips semiconductors TZA3046 fiber channel/gigabit ethernet transimpedance ampli?er the parasitic capacitance can be minimized through: 1. reducing the capacitance of the pin diode. this is achieved by proper choice of pin diode and typically a high reverse voltage. 2. reducing the parasitics around the input pad. this is achieved by placing the pin diode as close as possible to the tia. the pin diode can be biased with a positive or a negative voltage. figure 3 shows the pin diode biased positively, using the on-chip bias pad dref. the voltage at dref is derived from v cc by a low-pass ?lter comprising internal resistor r dref and external capacitor c2 which decouples any supply voltage noise. the value of external capacitor c2 affects the value of psrr and should have a minimum value of 470 pf. increasing this value improves the value of psrr. the current through r dref is measured and sourced at pad idref_mon, see section 7.3 . if the biasing for the pin diode is done external to the ic, pad dref can be left unconnected. if a negative bias voltage is used, the con?guration shown in figure 4 can be used. in this con?guration, the direction of the signal current is reversed to that shown in figure 3 . it is essential that in these applications, the pin diode bias voltage is ?ltered to achieve the best sensitivity. for maximum freedom on bonding location, 2 outputs are available for dref (pads 1 and 3). these are internally connected. both outputs can be used if necessary. if only one is used, the other can be left open. fig 3. the pin diode connected between the input and pad dref fig 4. the pin diode connected between the input and a negative supply voltage 001aae513 r dref 290 w c2 470 pf dref i pin iphoto 4 or 17 1 or 3 2 TZA3046 v cc 001aae514 r dref 290 w dref negative bias voltage i pin iphoto 4 or 17 1 or 3 2 TZA3046 v cc 4 .com u datasheet
TZA3046_1 ? koninklijke philips electronics n.v. 2006. all rights reserved. product data sheet rev. 01 19 may 2006 6 of 15 philips semiconductors TZA3046 fiber channel/gigabit ethernet transimpedance ampli?er 7.2 automatic gain control the TZA3046 transimpedance ampli?er can handle input currents from 2.5 m a to 1.7 ma which is equivalent to a dynamic range of 56 db (electrical equivalent with 28 db optical). at low input currents, the transimpedance must be high to obtain enough output voltage, and the noise should be low enough to guarantee a minimum bit error rate. at high input currents however, the transimpedance should be low to prevent excessive distortion at the output stage. to achieve the dynamic range, the gain of the ampli?er depends on the level of the input signal. this is achieved in the TZA3046 by an agc loop. the agc loop comprises a peak detector and a gain control circuit. the peak detector detects the amplitude of the signal and stores it in a hold capacitor. the hold capacitor voltage is compared to a threshold voltage. the agc is only active when the input signal level is larger than the threshold level and is inactive when the input signal is smaller than the threshold level. when the agc is inactive, the transimpedance is at its maximum. when the agc is active, the feedback resistor value of the transimpedance ampli?er is reduced, reducing its transimpedance, to keep the output voltage constant. figure 5 shows the transimpedance as function of the input current. to reduce sensitivity to offsets and output loads, the agc detector senses the output just before the output buffer. figure 6 shows the agc voltage as function of the input current. fig 5. transimpedance as function of the pin diode current fig 6. agc voltage as function of the pin diode current 001aae515 i pin ( m a) 110 4 10 3 10 10 2 1 10 transimpedance (k w ) 10 - 1 001aae516 1.5 2.5 3.5 v agc (v) 0.5 i pin ( m a) 110 4 10 3 10 10 2 4 .com u datasheet
TZA3046_1 ? koninklijke philips electronics n.v. 2006. all rights reserved. product data sheet rev. 01 19 may 2006 7 of 15 philips semiconductors TZA3046 fiber channel/gigabit ethernet transimpedance ampli?er for applications where the transimpedance is controlled by the tia it is advised to leave the agc pads unconnected to achieve fast attack and decay times. the agc function can be overruled by applying a voltage to pad agc. in this con?guration, connecting pad agc to ground gives maximum transimpedance and connecting it to v cc gives minimum transimpedance. this is depicted in figure 7 . the agc voltage should be derived from the v cc for proper functioning. for maximum freedom on bonding location, 2 pads are available for agc (pads 6 and 15). these pads are internally connected. both pads can be used if necessary. 7.3 monitoring rssi via idref_mon to facilitate rssi monitoring in modules (e.g. sff-8472 compliant sfp modules), a current output is provided. this output gives a current which is 20 % of the average dref current through the 290 w bias resistor. by connecting a resistor to the idref_mon output, a voltage proportional to the average input power can be obtained. the rssi monitoring is implemented by measuring the voltage over the 290 w bias resistor. this method is preferred over a simple current mirror because at small photo currents the voltage drop over the resistor is very small. this gives a higher bias voltage yielding better performance of the photodiode. for maximum freedom on bonding location, 2 pads are available for idref_mon (pads 5 and 16). these pads are internally connected. both pads can be used if necessary. if only one is used, the other can be left open. fig 7. transimpedance as function of the agc voltage 001aae517 v agc /v cc 0.3 0.9 0.7 0.5 1 10 transimpedance (k w ) 10 - 1 4 .com u datasheet
TZA3046_1 ? koninklijke philips electronics n.v. 2006. all rights reserved. product data sheet rev. 01 19 may 2006 8 of 15 philips semiconductors TZA3046 fiber channel/gigabit ethernet transimpedance ampli?er 8. limiting values 9. characteristics table 3: limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v cc supply voltage - 0.5 +3.8 v v n voltage on any other pin pad iphoto - 0.5 +2.0 v out, outq - 0.5 v cc + 0.5 v agc, idref_mon - 0.5 v cc + 0.5 v dref - 0.5 v cc + 0.5 v i n current on any other pin pad iphoto - 4.0 +4.0 ma out, outq - 10 +10 ma agc, idref_mon - 0.2 +0.2 ma dref - 4.0 +4.0 ma p tot total power dissipation - 300 mw t amb ambient temperature - 40 +85 c t j junction temperature - 150 c t stg storage temperature - 65 +150 c table 4: characteristics typical values at t j =25 c and v cc = 3.3 v; minimum and maximum values are valid over the entire ambient temperature range and supply voltage range; all voltages are measured with respect to ground; unless otherwise speci?ed. symbol parameter conditions min typ max unit v cc supply voltage 2.97 3.3 3.6 v i cc supply current ac-coupled; r l(dif) = 100 w ; excluding i dref and i idref_mon -21 23 ma p tot total power dissipation v cc = 3.3 v - 70 76 mw t j junction temperature - 40 - +125 c t amb ambient temperature - 40 +25 +85 c r tr small-signal transresistance measured differentially; ac-coupled, r l(dif) = 100 w 5.5 7.5 10.5 k w f -3db(h) high frequency - 3 db point c pin = 0.5 pf 800 1050 - mhz i n(rms)(itg)(tot) total integrated rms noise current over bandwidth referenced to input; c pin = 0.5 pf; f -3db(min) = 875 mhz [1] - 126 164 na automatic gain control loop: pad agc t att attack time agc pad unconnected - 14 - m s t decay decay time agc pad unconnected - 40 - m s v th(agc)(p-p) peak-to-peak agc threshold voltage referenced to output; measured differentially - 125 - mv 4 .com u datasheet
TZA3046_1 ? koninklijke philips electronics n.v. 2006. all rights reserved. product data sheet rev. 01 19 may 2006 9 of 15 philips semiconductors TZA3046 fiber channel/gigabit ethernet transimpedance ampli?er [1] guaranteed by design. [2] max input current is guaranteed for ber < 10 - 10 [3] max input current is guaranteed for t amb = 25 [4] max value of 500 mv belongs to i pin = 1250 m a (p-p) bias voltage: pad dref r (dref-vcc) resistance between pin dref and pin v cc tested at dc level; t amb =25 c 260 290 320 w tc rdref temperature coef?cient of r dref - 0.33 - w / c input: pad iphoto i iphoto(p-p) peak-to-peak current on pad iphoto [2] [3] - 1000 +1700 - m a v bias(i) input bias voltage 700 850 1000 mv monitor: pad idref_mon v mon monitor voltage 0 - v cc - 0.4 v i idref_mon /i dref monitor current ratio ratio i idref_mon / i dref 19.5 20 20.5 % i offset(mon) monitor offset current t amb =25 c 0 10 20 m a tc i(offset)mon temperature coef?cient of monitor offset current - 30 - na/ c data outputs: pads out and outq v o(cm) common mode output voltage ac-coupled; r l(dif) = 100 w -v cc - 1.2 - v v o(dif)(p-p) peak-to-peak differential output voltage ac-coupled; r l(dif) = 100 w i pin = 2.5 m a (p-p) r tr 14 19 - mv i pin = 100 m a (p-p) - 120 - mv i pin = 1500 m a (p-p) [4] - 325 600 mv r o(dif) differential output resistance tested at dc level - 100 - w t r rise time 20 % to 80 %; i pin = 100 m a (p-p) - 150 - ps t f fall time 80 % to 20 %; i pin = 100 m a (p-p) - 150 - ps table 4: characteristics continued typical values at t j =25 c and v cc = 3.3 v; minimum and maximum values are valid over the entire ambient temperature range and supply voltage range; all voltages are measured with respect to ground; unless otherwise speci?ed. symbol parameter conditions min typ max unit 4 .com u datasheet
TZA3046_1 ? koninklijke philips electronics n.v. 2006. all rights reserved. product data sheet rev. 01 19 may 2006 10 of 15 philips semiconductors TZA3046 fiber channel/gigabit ethernet transimpedance ampli?er 10. application information for maximum freedom on bonding location, 2 outputs are available for out and outq. the outputs should be used in pairs: pad 14 with pad 7 or pad 8 with pad 13. pad 8 is internally connected with pad 14, pad 7 is internally connected with pad 13. the device is guaranteed with only one pair used. the other pair should be left open. two examples of the bonding possibilities are shown in figure 8 . fig 8. application diagram highlighting ?exible pad lay out c out c outq idref_mon v cc pin TZA3046u gnd c outq c out v cc idref_mon pin TZA3046u gnd 001aae518 4 .com u datasheet
xxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx x xxxxxxxxxxxxxx xxxxxxxxxx xxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxx xx xxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxx xxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxx xxxxxxxxxxxxxx xxxxxx xx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxx xxxxx x x TZA3046_1 ? koninklijke philips electronics n.v. 2006. all rights reserved. product data sheet rev. 01 19 may 2006 11 of 15 philips semiconductors TZA3046 fiber channel/gigabit ethernet transimpedance ampli?er 11. test information total impedance of the test circuit (z tot(tc) ) is calculated by the equation z tot(tc) =s 21 (r+z i ) 2, where s 21 is the insertion loss of ports 1 and 2. typical values: r = 330 w , z i =30 w . fig 9. test circuit 001aae519 55 w 330 w r 8.2 k w port2 z o = 50 w z o = 50 w z o = 50 w port1 dc-in data clock gnd out outq iphoto network analyzer TZA3046 v cc pattern generator s-parameter test set 22 nf 22 nf 22 nf 9, 10, 11, 12 4 or 17 8 or 14 7 or 13 2 trigger input 2 1 sampling oscilloscope 4 .com u datasheet
TZA3046_1 ? koninklijke philips electronics n.v. 2006. all rights reserved. product data sheet rev. 01 19 may 2006 12 of 15 philips semiconductors TZA3046 fiber channel/gigabit ethernet transimpedance ampli?er 12. bare die information 13. package outline not applicable. origin is center of die. fig 10. bonding pad locations table 5: physical characteristics of the bare die parameter value glass passivation 0.3 m m psg (phosphosilicate glass) on top of 0.8 m m silicon nitride bonding pad dimension minimum dimension of exposed metallization is 90 m m 90 m m (pad size = 100 m m 100 m m) except pads 2 and 3 which have exposed metallization of 80 m m 80 m m (pad size = 90 m m 90 m m) metallization 2.8 m m alcu thickness 380 m m nominal die dimension 820 m m 1300 m m ( 20 m m 2 ) backing silicon; electrically connected to gnd potential through substrate contacts attach temperature < 440 c; recommended die attach is glue attach time < 15 s 456 (0,0) x y 17 16 15 14 13 12 11 78910 001aac627 1 2 3 4 .com u datasheet
TZA3046_1 ? koninklijke philips electronics n.v. 2006. all rights reserved. product data sheet rev. 01 19 may 2006 13 of 15 philips semiconductors TZA3046 fiber channel/gigabit ethernet transimpedance ampli?er 14. handling information 14.1 general inputs and outputs are protected against electrostatic discharge in normal handling. however, to be completely safe you must take normal precautions appropriate to handling mos devices; see jesd625-a and/or iec61340-5 . 14.2 additional information pad iphoto has limited protection to ensure good rf performance. this pad should be handled with extreme care. 15. abbreviations 16. revision history table 6. abbreviations acronym description ber bit error rate fttx fiber to the x oc3 optical carrier level 3 (155.52 mbit/s) pin positive intrinsic negative psrr power supply rejection ratio rssi received signal strength indicator sdh synchronous digital hierarchy sfp small form-factor pluggable sonet synchronous optical network stm1 synchronous transport module 1 (155.52 mbit/s table 7. revision history document id release date data sheet status change notice supersedes TZA3046_1 20060519 product data sheet - - 4 .com u datasheet
TZA3046_1 ? koninklijke philips electronics n.v. 2006. all rights reserved. product data sheet rev. 01 19 may 2006 14 of 15 philips semiconductors TZA3046 fiber channel/gigabit ethernet transimpedance ampli?er 17. legal information 17.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term short data sheet is explained in section de?nitions. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple dev ices. the latest product status information is available on the internet at url http://www .semiconductors .philips .com. 17.2 de?nitions draft the document is a draft version only. the content is still under internal review and subject to formal approval, which may result in modi?cations or additions. philips semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. short data sheet a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request via the local philips semiconductors sales of?ce. in case of any inconsistency or con?ict with the short data sheet, the full data sheet shall prevail. 17.3 disclaimers general information in this document is believed to be accurate and reliable. however, philips semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. right to make changes philips semiconductors reserves the right to make changes to information published in this document, including without limitation speci?cations and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use philips semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a philips semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. philips semiconductors accepts no liability for inclusion and/or use of philips semiconductors products in such equipment or applications and therefore such inclusion and/or use is for the customers own risk. applications applications that are described herein for any of these products are for illustrative purposes only. philips semiconductors makes no representation or warranty that such applications will be suitable for the speci?ed use without further testing or modi?cation. limiting values stress above one or more limiting values (as de?ned in the absolute maximum ratings system of iec 60134) may cause permanent damage to the device. limiting values are stress ratings only and and operation of the device at these or any other conditions above those given in the characteristics sections of this document is not implied. exposure to limiting values for extended periods may affect device reliability. terms and conditions of sale philips semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www .semiconductors .philips .com/pro? le/ter ms , including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by philips semiconductors. in case of any inconsistency or con?ict between information in this document and such terms and conditions, the latter will prevail. no offer to sell or license nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. bare die all die are tested on compliance with all related technical speci?cations as stated in this data sheet up to the point of wafer sawing for a period of ninety (90) days from the date of delivery by philips semiconductors. if there are data sheet limits not guaranteed, these will be separately indicated in the data sheet. there are no post-packing tests performed on individual die or wafers. philips semiconductors has no control of third party procedures in the sawing, handling, packing or assembly of the die. accordingly, philips semiconductors assumes no liability for device functionality or performance of the die or systems after third party sawing, handling, packing or assembly of the die. it is the responsibility of the customer to test and qualify their application in which the die is used. all die sales are conditioned upon and subject to the customer entering into a written die sale agreement with philips semiconductors through its legal department. 17.4 trademarks notice: all referenced brands, product names, service names and trademarks are the property of their respective owners. 18. contact information for additional information, please visit: http://www.semiconductors.philips.com for sales of?ce addresses, send an email to: sales.addresses@www.semiconductors.philips.com document status [1] [2] product status [3] de?nition objective [short] data sheet development this document contains data from the objective speci?cation for product development. preliminary [short] data sheet quali?cation this document contains data from the preliminary speci?cation. product [short] data sheet production this document contains the product speci?cation. 4 .com u datasheet
philips semiconductors TZA3046 fiber channel/gigabit ethernet transimpedance ampli?er ? koninklijke philips electronics n.v. 2006. all rights reserved. for more information, please visit: http://www.semiconductors.philips.com. for sales office addresses, email to: sales.addresses@www.semiconductors.philips.com. date of release: 19 may 2006 document identifier: TZA3046_1 please be aware that important notices concerning this document and the product(s) described herein, have been included in section legal information. 19. contents 1 general description . . . . . . . . . . . . . . . . . . . . . . 1 2 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 4 ordering information . . . . . . . . . . . . . . . . . . . . . 2 5 block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 2 6 pinning information . . . . . . . . . . . . . . . . . . . . . . 3 6.1 pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 6.2 pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3 7 functional description . . . . . . . . . . . . . . . . . . . 4 7.1 pin diode connections . . . . . . . . . . . . . . . . . . . 4 7.2 automatic gain control . . . . . . . . . . . . . . . . . . . 6 7.3 monitoring rssi via idref_mon . . . . . . . . . . 7 8 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 8 9 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 8 10 application information. . . . . . . . . . . . . . . . . . 10 11 test information . . . . . . . . . . . . . . . . . . . . . . . . 11 12 bare die information . . . . . . . . . . . . . . . . . . . . 12 13 package outline . . . . . . . . . . . . . . . . . . . . . . . . 12 14 handling information. . . . . . . . . . . . . . . . . . . . 13 14.1 general . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 14.2 additional information . . . . . . . . . . . . . . . . . . . 13 15 abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 13 16 revision history . . . . . . . . . . . . . . . . . . . . . . . . 13 17 legal information. . . . . . . . . . . . . . . . . . . . . . . 14 17.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 14 17.2 de?nitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 17.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 17.4 trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 18 contact information. . . . . . . . . . . . . . . . . . . . . 14 19 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 4 .com u datasheet

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